Flat bands in slightly twisted bilayer graphene: Tight-binding calculations
Federico Santa María Technical University
Abstract
The presence of flat bands near Fermi level has been proposed as an explanation for high transition temperature superconductors. The bands of graphite are extremely sensitive to topological defects which modify the electronic structure. In this Rapid Communication, we found nondispersive flat bands no farther than 10 meV of the Fermi energy in slightly twisted bilayer graphene as a signature of a transition from a parabolic dispersion of bilayer graphene to the characteristic linear dispersion of graphene. This transition occurs for relative rotation angles of layers around $1.5\ifmmode^\circ\else\textdegree\fi{}$ and is related to a process of layer decoupling. We have performed ab initio calculations to…
Citation impact
- FWCI
- 6.99
- Percentile
- 100%
- References
- 29
Authors
5Topics & keywords
- Bilayer graphene
- Graphene
- Condensed matter physics
- Hamiltonian (control theory)
- Tight binding
- Bilayer
- Atomic orbital
- Fermi level
- Affordable and clean energy