Metal‐Assisted Chemical Etching of Silicon: A Review
Jiangsu University · Max Planck Institute of Microstructure Physics
Abstract
This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks,…
Citation impact
- FWCI
- 55.65
- Percentile
- 100%
- References
- 121
Authors
5- ZHZhipeng HuangCorresponding
Jiangsu University, Max Planck Institute of Microstructure Physics
- NGNadine GeyerCorresponding
Max Planck Institute of Microstructure Physics
- PWP. Werner
Max Planck Institute of Microstructure Physics
- JDJohannes de Boor
Max Planck Institute of Microstructure Physics
- UGU. Gösele
Max Planck Institute of Microstructure Physics
Topics & keywords
- Isotropic etching
- Materials science
- Etching (microfabrication)
- Silicon
- Nanotechnology
- Lithography
- Reactive-ion etching
- Dry etching