Stabilizing the ferroelectric phase in doped hafnium oxide
NaMLab (Germany) · Tokyo Institute of Technology · +8 more institutions
Abstract
The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO2 was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO2 to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were…
Citation impact
- FWCI
- 15.86
- Percentile
- 100%
- References
- 44
Authors
12Topics & keywords
- Ferroelectricity
- Materials science
- Dopant
- Annealing (glass)
- Doping
- Electrode
- Polarization (electrochemistry)
- Hafnia