articleElectronicsSep 9, 2015GOLD OA

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

EWEe Wah LimRIRazali Ismail

University of Technology Malaysia

Indexed incrossrefdoaj

Abstract

Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular…

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Topics & keywords

Topics
Keywords
  • Thermal conduction
  • Valence (chemistry)
  • Resistive random-access memory
  • Materials science
  • Quantum tunnelling
  • Space charge
  • Dielectric
  • Nanotechnology
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