Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼10(7)) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1,…

• UD
  U.S. Department of Energy

  Awards: 76SF00515, DE-AC02, AC02-76SF00515, DE-AC02-
• NN
  National Natural Science Foundation of China

  Award: 11374142
• GO
  Government of Jiangsu Province
• NS
  Natural Science Foundation of Jiangsu Province

  Awards: BK20140017, BK20130544
• FR
  Fundamental Research Funds for the Central Universities
• SR
  Specialized Research Fund for the Doctoral Program of Higher Education of China
• BE
  Basic Energy Sciences

  Awards: DE-AC02, DE-AC02-76SF00515, 76SF00515, AC02-76SF00515
• DO
  Division of Materials Sciences and Engineering

  Awards: DE-AC02, DE-AC02-76SF00515