Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface
Research Center for Applied Science, Academia Sinica · King Abdullah University of Science and Technology · +3 more institutions
Abstract
Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the…
Citation impact
- FWCI
- 56.72
- Percentile
- 100%
- References
- 41
Authors
13- MLMingyang LiCorresponding
Research Center for Applied Science, Academia Sinica, King Abdullah University of Science and Technology
- YSYumeng ShiCorresponding
King Abdullah University of Science and Technology
- CCChia-Chin Cheng
National Yang Ming Chiao Tung University, Research Center for Applied Science, Academia Sinica
- LLLi‐Syuan Lu
National Yang Ming Chiao Tung University
- YLYung‐Chang Lin
National Institute of Advanced Industrial Science and Technology
Topics & keywords
- Monolayer
- Epitaxy
- Materials science
- Interface (matter)
- Optoelectronics
- Crystallography
- Nanotechnology
- Layer (electronics)