Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
Seoul National University · Division of Materials Science and Engineering · +2 more institutions
Abstract
The resistive switching mechanism of 20- to 57-nm-thick TiO2 thin films grown by atomic-layer deposition was studied by current-voltage measurements and conductive atomic force microscopy. Electric pulse-induced resistance switching was repetitively (> a few hundred times) observed with a resistance ratio ⪢102. Both the low- and high-resistance states showed linear log current versus log voltage graphs with a slope of 1 in the low-voltage region where switching did not occur. The thermal stability of both conduction states was also studied. Atomic force microscopy studies under atmosphere and high-vacuum conditions showed that resistance switching is closely related to the formation and elimination of…
Citation impact
- FWCI
- 45.05
- Percentile
- 100%
- References
- 17
Authors
12Topics & keywords
- Materials science
- Thin film
- Electrical resistivity and conductivity
- Conductivity
- Atomic layer deposition
- Thermal conduction
- Resistive touchscreen
- Layer (electronics)