Phase patterning for ohmic homojunction contact in MoTe 2

Artificial van der Waals heterostructures with two-dimensional (2D) atomic crystals are promising as an active channel or as a buffer contact layer for next-generation devices. However, genuine 2D heterostructure devices remain limited because of impurity-involved transfer process and metastable and inhomogeneous heterostructure formation. We used laser-induced phase patterning, a polymorph engineering, to fabricate an ohmic heterophase homojunction between semiconducting hexagonal (2H) and metallic monoclinic (1T') molybdenum ditelluride (MoTe2) that is stable up to 300°C and increases the carrier mobility of the MoTe2 transistor by a factor of about 50, while retaining a high on/off current ratio of 10(6).…

• NR
  Neurosciences Research Foundation

  Awards: 2013R1A1A1008025, NRF-2005-0093845
• NR
  National Research Foundation of Korea

  Award: NRF-2014R1A1A2056386
• IF
  Institute for Basic Science

  Award: IBS-R011-D1