Chemical doping of graphene
Institute of Chemistry · Beijing National Laboratory for Molecular Sciences · +2 more institutions
Abstract
Recently, a lot of effort has been focused on improving the performance and exploring the electric properties of graphene. This article presents a summary of chemical doping of graphene aimed at tuning the electronic properties of graphene. p-Type and n-type doping of graphene achieved through surface transfer doping or substitutional doping and their applications based on doping are reviewed. Chemical doping for band gap tuning in graphene is also presented. It will be beneficial to designing high performance electronic devices based on chemically doped graphene.
Citation impact
- FWCI
- 26.52
- Percentile
- 100%
- References
- 160
Authors
3- HLHongtao Liu
Institute of Chemistry, Beijing National Laboratory for Molecular Sciences, University of Chinese Academy of Sciences, Chinese Academy of Sciences
- YLYunqi LiuCorresponding
Chinese Academy of Sciences, Institute of Chemistry, Beijing National Laboratory for Molecular Sciences
- DZDaoben Zhu
Chinese Academy of Sciences, Institute of Chemistry, Beijing National Laboratory for Molecular Sciences
Topics & keywords
- Graphene
- Doping
- Materials science
- Nanotechnology
- Band gap
- Optoelectronics