Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

We analyze the optical gain of tensile-strained, n-type Ge material for Si-compatible laser applications. The band structure of unstrained Ge exhibits indirect conduction band valleys (L) lower than the direct valley (Gamma) by 136 meV. Adequate strain and n-type doping engineering can effectively provide population inversion in the direct bandgap of Ge. The tensile strain decreases the difference between the L valleys and the Gamma valley, while the extrinsic electrons from n-type doping fill the L valleys to the level of the Gamma valley to compensate for the remaining energy difference. Our modeling shows that with a combination of 0.25% tensile strain and an extrinsic electron density of 7.6x10(19)/cm(3)…