articleNature MaterialsAug 31, 2014Closed access

Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

Rutgers, The State University of New Jersey · Los Alamos National Laboratory

PubMed
Indexed incrossrefpubmed

Abstract

No abstract available for this paper.

Citation impact

1,802
total citations
FWCI
57.75
Percentile
100%
References
58
Citations per year

Authors

7

Topics & keywords

Keywords
  • Materials science
  • Contact resistance
  • Transistor
  • Dangling bond
  • Schottky barrier
  • Semiconductor
  • Optoelectronics
  • Band gap
UN Sustainable Development Goals
  • Affordable and clean energy
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