Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Rutgers, The State University of New Jersey · Los Alamos National Laboratory
Indexed incrossrefpubmed
Abstract
No abstract available for this paper.
Citation impact
1,802
total citations
- FWCI
- 57.75
- Percentile
- 100%
- References
- 58
Citations per year
Authors
7Topics & keywords
Topics
Keywords
- Materials science
- Contact resistance
- Transistor
- Dangling bond
- Schottky barrier
- Semiconductor
- Optoelectronics
- Band gap
UN Sustainable Development Goals
- Affordable and clean energy
No related works found for this paper.