Gate-induced insulating state in bilayer graphene devices
Delft University of Technology
Indexed inarxivcrossrefpubmed
Abstract
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Citation impact
1,667
total citations
- FWCI
- 53.12
- Percentile
- 100%
- References
- 28
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Authors
5Topics & keywords
Topics
Keywords
- Materials science
- Bilayer graphene
- Graphene
- Optoelectronics
- Electric field
- Field-effect transistor
- Band gap
- Transistor
UN Sustainable Development Goals
- Affordable and clean energy
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