Current Losses at the Front of Silicon Heterojunction Solar Cells
École Polytechnique Fédérale de Lausanne · École Normale Supérieure - PSL
Abstract
The current losses due to parasitic absorption in the indium tin oxide (ITO) and amorphous silicon (a-Si:H) layers at the front of silicon heterojunction solar cells are isolated and quantified. Quantum efficiency spectra of cells in which select layers are omitted reveal that the collection efficiency of carriers generated in the ITO and doped a-Si:H layers is zero, and only 30% of light absorbed in the intrinsic a-Si:H layer contributes to the short-circuit current. Using the optical constants of each layer acquired from ellipsometry as inputs in a model, the quantum efficiency and short-wavelength current loss of a heterojunction cell with arbitrary a-Si:H layer thicknesses and arbitrary ITO doping can be…
Citation impact
- FWCI
- 25.23
- Percentile
- 100%
- References
- 31
Authors
7- ZCZachary C. HolmanCorresponding
École Polytechnique Fédérale de Lausanne, École Normale Supérieure - PSL
- ADAntoine Descoeudres
École Polytechnique Fédérale de Lausanne, École Normale Supérieure - PSL
- LBLoris Barraud
École Normale Supérieure - PSL, École Polytechnique Fédérale de Lausanne
- FZFernando Zicarelli Fernandez
École Polytechnique Fédérale de Lausanne, École Normale Supérieure - PSL
- JPJohannes P. Seif
École Normale Supérieure - PSL, École Polytechnique Fédérale de Lausanne
Topics & keywords
- Quantum efficiency
- Heterojunction
- Amorphous silicon
- Optoelectronics
- Materials science
- Silicon
- Solar cell
- Polymer solar cell
- Affordable and clean energy