Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

In this paper, recent advances in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) are demonstrated. 220–350-nm-band DUV LEDs have been realized by developing crystal growth techniques for wide-bandgap AlN and AlGaN semiconductors. Significant increases in internal quantum efficiency (IQE) have been achieved for AlGaN DUV emissions by developing low-threading-dislocation-density (TDD) AlN buffer layers grown on sapphire substrates. The electron injection efficiency (EIE) of the LEDs was also significantly increased by introducing a multiquantum barrier (MQB). We also discuss light extraction efficiency (LEE), which is the most important parameter for achieving high-efficiency DUV LEDs. We…