Doping against the Native Propensity of MoS 2 : Degenerate Hole Doping by Cation Substitution

Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS2) is natively an n-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable p-type doping has not been achieved. The lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2, as well as limits carrier conduction to spin-degenerate…

• NS
  National Science Council

  Award: NSC 102-2112-M-018-002
• KI
  Korea Institute of Science and Technology
• DO
  Division of Materials Research

  Award: DMR-1306601