Fabrication of Single‐ and Multilayer MoS 2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature

Single- and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm. Two-dimensional nanomaterials have received much attention in recent years owing to their unusual properties that stem from their quantum and surface effects.1-26 Graphene,27, 28 a single-layer 2D carbon…