Integrated Circuits Based on Bilayer MoS 2 Transistors
Massachusetts Institute of Technology · Academia Sinica · +2 more institutions
Abstract
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS(2)), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS(2) allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS(2) show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully…
Citation impact
- FWCI
- 69.75
- Percentile
- 100%
- References
- 44
Authors
10- HWHan WangCorresponding
Massachusetts Institute of Technology
- LYLili Yu
Massachusetts Institute of Technology
- YLYi‐Hsien Lee
Massachusetts Institute of Technology, Academia Sinica, Institute of Atomic and Molecular Sciences, Academia Sinica
- YSYumeng Shi
Massachusetts Institute of Technology
- AHAllen Hsu
Massachusetts Institute of Technology
Topics & keywords
- Transistor
- NAND gate
- Materials science
- NOR gate
- Optoelectronics
- Electronic circuit
- Molybdenum disulfide
- Logic gate