articleNano LettersAug 3, 2012GREEN OA

Integrated Circuits Based on Bilayer MoS 2 Transistors

Massachusetts Institute of Technology · Academia Sinica · +2 more institutions

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Indexed inarxivcrossrefpubmed

Abstract

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS(2)), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS(2) allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS(2) show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully…

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