High Performance Multilayer MoS 2 Transistors with Scandium Contacts
Purdue University West Lafayette
Abstract
While there has been growing interest in two-dimensional (2-D) crystals other than graphene, evaluating their potential usefulness for electronic applications is still in its infancy due to the lack of a complete picture of their performance potential. The focus of this article is on contacts. We demonstrate that through a proper understanding and design of source/drain contacts and the right choice of number of MoS(2) layers the excellent intrinsic properties of this 2-D material can be harvested. Using scandium contacts on 10-nm-thick exfoliated MoS(2) flakes that are covered by a 15 nm Al(2)O(3) film, high effective mobilities of 700 cm(2)/(V s) are achieved at room temperature. This breakthrough is largely…
Citation impact
- FWCI
- 64.92
- Percentile
- 100%
- References
- 39
Authors
4Topics & keywords
- Ohmic contact
- Scandium
- Contact resistance
- Materials science
- Transistor
- Optoelectronics
- Graphene
- Engineering physics