Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder
Instituto Nacional de Metrologia, Qualidade e Tecnologia · Universidade Federal do Rio de Janeiro · +2 more institutions
Abstract
We report on the micro-Raman spectroscopy of monolayer, bilayer, trilayer, and many layers of graphene (graphite) bombarded by low-energy argon ions with different doses. The evolution of peak frequencies, intensities, linewidths, and areas of the main Raman bands of graphene is analyzed as function of the distance between defects and number of layers. We describe the disorder-induced frequency shifts and the increase in the linewidth of the Raman bands by means of a spatial-correlation model. Also, the evolution of the relative areas ${A}_{D}/{A}_{G}$, ${A}_{{D}^{\ensuremath{'}}}/{A}_{G}$, and ${A}_{{G}^{\ensuremath{'}}}/{A}_{G}$ is described by a phenomenological model. The present results can be used to…
Citation impact
- FWCI
- 15.40
- Percentile
- 100%
- References
- 40
Authors
7- EHErlon H. Martins FerreiraCorresponding
Instituto Nacional de Metrologia, Qualidade e Tecnologia
- MVMarcus V. O. Moutinho
Universidade Federal do Rio de Janeiro
- FSFernando Stavale
Instituto Nacional de Metrologia, Qualidade e Tecnologia
- MMMárcia Maria Lucchese
Instituto Nacional de Metrologia, Qualidade e Tecnologia, Universidade Federal do Pampa
- RBRodrigo B. Capaz
Universidade Federal do Rio de Janeiro, Instituto Nacional de Metrologia, Qualidade e Tecnologia
Topics & keywords
- Raman spectroscopy
- Graphene
- Materials science
- Laser linewidth
- Graphite
- Bilayer graphene
- Monolayer
- Ion
- Affordable and clean energy