Insulator to Semimetal Transition in Graphene Oxide
Rutgers, The State University of New Jersey
Abstract
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator−semiconductor−semimetal transitions with reduction. The apparent transport gap ranges from 10 to 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to an increased number of available hopping sites.
Citation impact
- FWCI
- 17.70
- Percentile
- 100%
- References
- 26
Authors
5- GEGoki EdaCorresponding
Rutgers, The State University of New Jersey
- CMCecilia Mattevi
Rutgers, The State University of New Jersey
- HYHisato Yamaguchi
Rutgers, The State University of New Jersey
- HKHoKwon Kim
Rutgers, The State University of New Jersey
- MCManish Chhowalla
Rutgers, The State University of New Jersey
Topics & keywords
- Graphene
- Semimetal
- Condensed matter physics
- Oxide
- Materials science
- Semiconductor
- Insulator (electricity)
- Variable-range hopping