articleIBM Journal of Research and DevelopmentJul 1, 2008Closed access

Phase-change random access memory: A scalable technology

IBM Research - Almaden · IBM Research - Thomas J. Watson Research Center · +2 more institutions

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Abstract

Nonvolatile RAM using resistance contrast in phase-change materials [or phase-change RAM (PCRAM)] is a promising technology for future storage-class memory. However, such a technology can succeed only if it can scale smaller in size, given the increasingly tiny memory cells that are projected for future technology nodes (i.e., generations). We first discuss the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms. We then discuss experiments that directly address the scaling properties of the phase-change materials themselves, including studies of phase…

Citation impact

1,010
total citations
FWCI
28.88
Percentile
100%
References
65
Citations per year

Authors

11

Topics & keywords

Keywords
  • Phase-change memory
  • Design for manufacturability
  • Scaling
  • Scalability
  • Computer science
  • Non-volatile memory
  • Reliability (semiconductor)
  • Materials science
UN Sustainable Development Goals
  • Affordable and clean energy
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