A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
National Institute for Materials Science · Japan Science and Technology Agency
Abstract
Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high…
Citation impact
- FWCI
- 12.96
- Percentile
- 100%
- References
- 152
Authors
3Topics & keywords
- Photodetection
- Photodetector
- Responsivity
- Materials science
- Semiconductor
- Optoelectronics
- Ultraviolet
- Band gap