ZnO Schottky barriers and Ohmic contacts

ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a…

• NS
  National Science Foundation

  Awards: ECS-1002178, DMR-0803276, DMR-0513968, ECS-0088549
• AF
  Air Force Office of Scientific Research

  Award: FA9550-08-0100452