Physics of thin-film ferroelectric oxides
University of Geneva · Rutgers, The State University of New Jersey · +1 more institution
Abstract
This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this…
Citation impact
- FWCI
- 51.13
- Percentile
- 100%
- References
- 374
Authors
3Topics & keywords
- Ferroelectricity
- Thin film
- Nanotechnology
- Engineering physics
- Nanoscopic scale
- Physics
- Cover (algebra)
- Materials science