Magnetic tunnel junctions
Carnegie Mellon University · Western Digital (United States)
Abstract
Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlOx- and TiOx-based magnetic tunnel junctions that exhibit a large magnetoresistive effect at room temperature. As their commercialization in various applications begins, a new type of magnetic tunnel junction with a crystalline MgO tunnel barrier has emerged that shows a much larger room-temperature magnetoresistive effect. We present a brief overview of the development of magnetic tunnel junctions, introducing the underlying physics. We also discuss two important commercial applications: read sensors in hard disk drives and memory elements in…
Citation impact
- FWCI
- 20.16
- Percentile
- 100%
- References
- 54
Authors
2Topics & keywords
- Magnetoresistance
- Tunnel magnetoresistance
- Materials science
- Commercialization
- Magnetic storage
- Engineering physics
- Magnetoresistive random-access memory
- Tunnel junction