articleMaterials TodayOct 19, 2006HYBRID OA

Magnetic tunnel junctions

Carnegie Mellon University · Western Digital (United States)

Indexed incrossref

Abstract

Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlOx- and TiOx-based magnetic tunnel junctions that exhibit a large magnetoresistive effect at room temperature. As their commercialization in various applications begins, a new type of magnetic tunnel junction with a crystalline MgO tunnel barrier has emerged that shows a much larger room-temperature magnetoresistive effect. We present a brief overview of the development of magnetic tunnel junctions, introducing the underlying physics. We also discuss two important commercial applications: read sensors in hard disk drives and memory elements in…

Citation impact

656
total citations
FWCI
20.16
Percentile
100%
References
54
Citations per year

Authors

2

Topics & keywords

Keywords
  • Magnetoresistance
  • Tunnel magnetoresistance
  • Materials science
  • Commercialization
  • Magnetic storage
  • Engineering physics
  • Magnetoresistive random-access memory
  • Tunnel junction
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