High‐Gain and Low‐Driving‐Voltage Photodetectors Based on Organolead Triiodide Perovskites

Solution-processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of −1 V. The charge traps caused by large concentrations of Pb2+ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped-hole-induced electron injection mechanism. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed…