Electroluminescence and Photocurrent Generation from Atomically Sharp WSe 2 /MoS 2 Heterojunction p–n Diodes
University of California, Los Angeles · California NanoSystems Institute
Abstract
The p-n diodes represent the most fundamental device building blocks for diverse optoelectronic functions, but are difficult to achieve in atomically thin transition metal dichalcogenides (TMDs) due to the challenges in selectively doping them into p- or n-type semiconductors. Here, we demonstrate that an atomically thin and sharp heterojunction p-n diode can be created by vertically stacking p-type monolayer tungsten diselenide (WSe2) and n-type few-layer molybdenum disulfide (MoS2). Electrical measurements of the vertically staked WSe2/MoS2 heterojunctions reveal excellent current rectification behavior with an ideality factor of 1.2. Photocurrent mapping shows rapid photoresponse over the entire overlapping…
Citation impact
- FWCI
- 44.31
- Percentile
- 100%
- References
- 42
Authors
10- RCRui ChengCorresponding
University of California, Los Angeles
- DLDehui Li
University of California, Los Angeles
- HZHailong Zhou
University of California, Los Angeles
- CWChen Wang
University of California, Los Angeles
- AYAnxiang Yin
University of California, Los Angeles
Topics & keywords
- Heterojunction
- Electroluminescence
- Tungsten diselenide
- Photocurrent
- Diode
- Rectification
- Stacking
- Light-emitting diode