Highly Flexible MoS 2  Thin-Film Transistors with Ion Gel Dielectrics

Pu, Jiang; Yomogida, Yohei; Liu, Keng‐Ku; Li, Lain‐Jong; Iwasa, Yoshihiro; Takenobu, Taishi

doi:10.1021/nl301335q

articleNano LettersJul 16, 2012Closed access

Highly Flexible MoS 2 Thin-Film Transistors with Ion Gel Dielectrics

JPJiang Pu YYYohei Yomogida KLKeng‐Ku Liu LLLain‐Jong Li YIYoshihiro Iwasa

Waseda University · Tohoku University · +3 more institutions

PubMed

Indexed incrossrefpubmed

Abstract

Molybdenum disulfide (MoS(2)) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (

Citation impact

820

total citations

FWCI: 32.46
Percentile: 100%
References: 29

Citations per year

Authors

JP
Jiang PuCorresponding
Waseda University
YY
Yohei Yomogida
Tohoku University, Waseda University
KL
Keng‐Ku Liu
Institute of Atomic and Molecular Sciences, Academia Sinica
LL
Lain‐Jong Li
Institute of Atomic and Molecular Sciences, Academia Sinica
YI
Yoshihiro Iwasa
The University of Tokyo, RIKEN

Topics & keywords

Topics

2D Materials and Applications100%
Advanced Sensor and Energy Harvesting Materials100%
Nanowire Synthesis and Applications100%

Keywords

Materials science
Thin-film transistor
Molybdenum disulfide
Transistor
Threshold voltage
Flexible electronics
Optoelectronics
Dielectric

UN Sustainable Development Goals

Affordable and clean energy

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