Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions
Nanjing University · Collaborative Innovation Center of Advanced Microstructures
Indexed inarxivcrossrefpubmed
Abstract
No abstract available for this paper.
Citation impact
669
total citations
- FWCI
- 23.17
- Percentile
- 100%
- References
- 31
Citations per year
Authors
5- ZWZheng WenCorresponding
Nanjing University, Collaborative Innovation Center of Advanced Microstructures
- CLChen Li
Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- DWDi Wu
Nanjing University, Collaborative Innovation Center of Advanced Microstructures
- ALAidong Li
Collaborative Innovation Center of Advanced Microstructures, Nanjing University
- NMNai‐Ben Ming
Nanjing University, Collaborative Innovation Center of Advanced Microstructures
Topics & keywords
Topics
Keywords
- Ferroelectricity
- Quantum tunnelling
- Materials science
- Heterojunction
- Semiconductor
- Optoelectronics
- Condensed matter physics
- Nanotechnology
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