Incipient Ferroelectricity in Al‐Doped HfO 2 Thin Films

Abstract Incipient ferroelectricity is known to occur in perovskites such as SrTiO 3 , KTaO 3 , and CaTiO 3 . For the first time it is shown that the intensively researched HfO 2 thin films (16 nm) also possess ferroelectric properties when aluminium is incorporated into the host lattice. Polarization measurements on Al:HfO 2 based metal–insulator–metal capacitors show an antiferroelectric‐to‐ferroelectric phase transition depending on annealing conditions and aluminium content. Structural investigation of the electrically characterized capacitors by grazing incidence X‐ray diffraction is presented in order to gain further insight on the potential origin of ferroelectricity. The non‐centrosymmetry of the…

• FS
  Freistaat Sachsen
• ER
  European Regional Development Fund