Synthesis of N-Doped Graphene by Chemical Vapor Deposition and Its Electrical Properties
Chinese Academy of Sciences · Beijing National Laboratory for Molecular Sciences
Abstract
To realize graphene-based electronics, various types of graphene are required; thus, modulation of its electrical properties is of great importance. Theoretic studies show that intentional doping is a promising route for this goal, and the doped graphene might promise fascinating properties and widespread applications. However, there is no experimental example and electrical testing of the substitutionally doped graphene up to date. Here, we synthesize the N-doped graphene by a chemical vapor deposition (CVD) method. We find that most of them are few-layer graphene, although single-layer graphene can be occasionally detected. As doping accompanies with the recombination of carbon atoms into graphene in the CVD…
Citation impact
- FWCI
- 63.22
- Percentile
- 100%
- References
- 73
Authors
6- DWDacheng WeiCorresponding
Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences
- YLYunqi Liu
Beijing National Laboratory for Molecular Sciences, Chinese Academy of Sciences
- YWYu Wang
Beijing National Laboratory for Molecular Sciences, Chinese Academy of Sciences
- HZHongliang Zhang
Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences
- LHLiping Huang
Beijing National Laboratory for Molecular Sciences, Chinese Academy of Sciences
Topics & keywords
- Graphene
- Chemical vapor deposition
- Doping
- Materials science
- Graphene nanoribbons
- Nanotechnology
- Graphene oxide paper
- Optoelectronics
- Clean water and sanitation