Band parameters for nitrogen-containing semiconductors
United States Naval Research Laboratory
Abstract
We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We…
Citation impact
- FWCI
- 61.57
- Percentile
- 100%
- References
- 411
Authors
2Topics & keywords
- Wurtzite crystal structure
- Wide-bandgap semiconductor
- Bowing
- Materials science
- Band gap
- Semiconductor
- Nitride
- Condensed matter physics
- Affordable and clean energy