articleJournal of Applied PhysicsSep 15, 2003Closed access

Band parameters for nitrogen-containing semiconductors

United States Naval Research Laboratory

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Abstract

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We…

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Authors

2

Topics & keywords

Keywords
  • Wurtzite crystal structure
  • Wide-bandgap semiconductor
  • Bowing
  • Materials science
  • Band gap
  • Semiconductor
  • Nitride
  • Condensed matter physics
UN Sustainable Development Goals
  • Affordable and clean energy
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