Raman characterization of defects and dopants in graphene
University of Rochester · Universidade Federal de Minas Gerais · +1 more institution
Abstract
In this article we review Raman studies of defects and dopants in graphene as well as the importance of both for device applications. First a brief overview of Raman spectroscopy of graphene is presented. In the following section we discuss the Raman characterization of three defect types: point defects, edges, and grain boundaries. The next section reviews the dependence of the Raman spectrum on dopants and highlights several common doping techniques. In the final section, several device applications are discussed which exploit doping and defects in graphene. Generally defects degrade the figures of merit for devices, such as carrier mobility and conductivity, whereas doping provides a means to tune the…
Citation impact
- FWCI
- 31.45
- Percentile
- 100%
- References
- 197
Authors
3Topics & keywords
- Graphene
- Raman spectroscopy
- Dopant
- Materials science
- Characterization (materials science)
- Doping
- Nanotechnology
- Grain boundary