articleAdvanced MaterialsJul 29, 2005Closed access

Magnetocapacitance and Magnetoresistance Near Room Temperature in a Ferromagnetic Semiconductor: La 2 NiMnO 6

Experimental Station · Wilmington University · +2 more institutions

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Abstract

Neutron diffraction studies confirm that La2NiMnO6 is ferromagnetic with moments on Ni and Mn indicating NiII and MnIV (small and large spheres, respectively, in Figure). Electrical resistivity measurements show semiconducting behavior with a room temperature conductivity of ∼102 Ω cm and very high resistivity at low temperature. On application of a magnetic field, significant changes in electrical resistivity and dielectric constant occur at temperatures as high as 280 K. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2005/c0737_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any…

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Topics & keywords

Keywords
  • Magnetoresistance
  • Electrical resistivity and conductivity
  • Magnetocapacitance
  • Materials science
  • Condensed matter physics
  • Ferromagnetism
  • Dielectric
  • Semiconductor
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