A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre
California Institute of Technology · Kavli Energy NanoScience Institute · +5 more institutions
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Abstract
No abstract available for this paper.
Citation impact
1,227
total citations
- FWCI
- 159.10
- Percentile
- 100%
- References
- 30
Citations per year
Authors
13- JEJonathan E. GreenCorresponding
California Institute of Technology, Kavli Energy NanoScience Institute
- JWJang Wook Choi
California Institute of Technology, Kavli Energy NanoScience Institute
- ABAkram Boukai
California Institute of Technology, Kavli Energy NanoScience Institute
- YLYuri L. Bunimovich
California Institute of Technology, Kavli Energy NanoScience Institute
- EJEzekiel Johnston‐Halperin
California Institute of Technology, Kavli Energy NanoScience Institute, The Ohio State University
Topics & keywords
Topics
Keywords
- Dram
- Computer science
- Dynamic random-access memory
- Memory refresh
- Electronic circuit
- Miniaturization
- Semiconductor memory
- Integrated circuit
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