Ultra-thin perfect absorber employing a tunable phase change material
Harvard University · William & Mary · +4 more institutions
Abstract
We show that perfect absorption can be achieved in a system comprising a single lossy dielectric layer of thickness much smaller than the incident wavelength on an opaque substrate by utilizing the nontrivial phase shifts at interfaces between lossy media. This design is implemented with an ultra-thin (∼λ/65) vanadium dioxide (VO2) layer on sapphire, temperature tuned in the vicinity of the VO2 insulator-to-metal phase transition, leading to 99.75% absorption at λ = 11.6 μm. The structural simplicity and large tuning range (from ∼80% to 0.25% in reflectivity) are promising for thermal emitters, modulators, and bolometers.
Citation impact
- FWCI
- 30.02
- Percentile
- 100%
- References
- 41
Authors
10- MAMikhail A. KatsCorresponding
Harvard University, William & Mary, University of Eastern Finland, Williams (United States), Singapore Institute of Manufacturing Technology
- DSDeepika Sharma
Harvard University, William & Mary, University of Eastern Finland, Williams (United States), Singapore Institute of Manufacturing Technology
- JLJiao Lin
Harvard University, William & Mary, University of Eastern Finland, Williams (United States), Singapore Institute of Manufacturing Technology
- PGPatrice Genevet
Harvard University, William & Mary, University of Eastern Finland, Williams (United States), Singapore Institute of Manufacturing Technology
- RBRomain Blanchard
Harvard University, William & Mary, University of Eastern Finland, Williams (United States), Singapore Institute of Manufacturing Technology
Topics & keywords
- Materials science
- Opacity
- Optoelectronics
- Sapphire
- Thin film
- Dielectric
- Absorption (acoustics)
- Optics