articleNature MaterialsJul 10, 2011Closed access

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

MLMyoung‐Jae LeeCBChang Bum LeeDLDongsoo LeeSRSeung Ryul LeeMCMan Chang

Samsung (South Korea) · Sejong University

PubMed
Indexed incrossrefpubmed

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Topics & keywords

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Keywords
  • Commutation
  • Crossbar switch
  • Non-volatile memory
  • Computer science
  • Transistor
  • Memristor
  • Scalability
  • Materials science
UN Sustainable Development Goals
  • Affordable and clean energy
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