Thin‐film solar cells: device measurements and analysis

Abstract Characterization of amorphous Si, CdTe, and Cu(InGa)Se 2 ‐based thin‐film solar cells is described with focus on the deviations in device behavior from standard device models. Quantum efficiency (QE), current–voltage ( J – V ), and admittance measurements are reviewed with regard to aspects of interpretation unique to the thin‐film solar cells. In each case, methods are presented for characterizing parasitic effects common in these solar cells in order to identify loss mechanisms and reveal fundamental device properties. Differences between these thin‐film solar cells and idealized devices are largely due to a high density of defect states in the absorbing layers and to parasitic losses due to the…