ZnO-Based Ultraviolet Photodetectors
National Institute for Materials Science
Abstract
Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal-semiconductor-metal photodiodes and p-n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance…
Citation impact
- FWCI
- 7.94
- Percentile
- 100%
- References
- 110
Authors
3Topics & keywords
- Photodetector
- Photodetection
- Optoelectronics
- Ultraviolet
- Materials science
- Photodiode
- Doping
- Band gap