High-Performance Air-Stable n-Channel Organic Thin Film Transistors Based on Halogenated Perylene Bisimide Semiconductors
BASF (United States) · Stanford University · +1 more institution
Abstract
The syntheses and comprehensive characterization of 14 organic semiconductors based on perylene bisimide (PBI) dyes that are equipped with up to four halogen substituents in the bay area of the perylene core and five different highly fluorinated imide substituents are described. The influence of the substituents on the LUMO level and the solid state packing of PBIs was examined by cyclic voltammetry and single crystal structure analyses of seven PBI derivatives, respectively. Top-contact/bottom-gate organic thin film transistor (OTFT) devices were constructed by vacuum deposition of these PBIs on SiO(2) gate dielectrics that had been pretreated with n-octadecyl triethoxysilane in vapor phase (OTS-V) or…
Citation impact
- FWCI
- 47.44
- Percentile
- 100%
- References
- 62
Authors
11- RSR. SchmidtCorresponding
BASF (United States), Stanford University, University of Würzburg
- JHJoon Hak Oh
Stanford University, University of Würzburg, BASF (United States)
- YSYa‐Sen Sun
BASF (United States), Stanford University, University of Würzburg
- MDM. Deppisch
Stanford University, BASF (United States), University of Würzburg
- AKAna-Maria Krause
BASF (United States), Stanford University, University of Würzburg
Topics & keywords
- Perylene
- Chemistry
- Thin-film transistor
- Organic semiconductor
- Pentacene
- Thin film
- Analytical Chemistry (journal)
- Optoelectronics