Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

Harnessing the potential of single crystal inorganic nanowires for practical advanced nanoscale applications requires not only reproducible synthesis of highly regular one-dimensional (1D) nanowire arrays directly on device platforms but also elegant device integration which retains structural integrity of the nanowires while significantly reducing or eliminating complex critical processing steps. Here we demonstrate a unique, direct, and bottom-up integration of a semiconductor 1D nanowire, using zinc oxide (ZnO) as an example, to obtain a vertical surround-gate field-effect transistor (VSG-FET). The vertical device structure and bottom-up integration reduce process complexity, compared to conventional…