Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium
University of California, Berkeley · Lawrence Berkeley National Laboratory · +1 more institution
Abstract
We report here the first degenerate n-doping of few-layer MoS2 and WSe2 semiconductors by surface charge transfer using potassium. High-electron sheet densities of ~1.0 × 10(13) cm(-2) and 2.5 × 10(12) cm(-2) for MoS2 and WSe2 are obtained, respectively. In addition, top-gated WSe2 and MoS2 n-FETs with selective K doping at the metal source/drain contacts are fabricated and shown to exhibit low contact resistances. Uniquely, WSe2 n-FETs are reported for the first time, exhibiting an electron mobility of ~110 cm(2)/V·s, which is comparable to the hole mobility of previously reported p-FETs using the same material. Ab initio simulations were performed to understand K doping of MoS2 and WSe2 in comparison with…
Citation impact
- FWCI
- 34.53
- Percentile
- 100%
- References
- 22
Authors
7- HFHui FangCorresponding
University of California, Berkeley, Lawrence Berkeley National Laboratory
- MTMahmut Tosun
Lawrence Berkeley National Laboratory, University of California, Berkeley
- GSGyungseon Seol
University of Florida
- TCTing Chia Chang
Lawrence Berkeley National Laboratory, University of California, Berkeley
- KTKuniharu Takei
Lawrence Berkeley National Laboratory, University of California, Berkeley
Topics & keywords
- Doping
- Materials science
- Electron mobility
- Graphene
- Semiconductor
- Transition metal
- Degenerate energy levels
- Degenerate semiconductor