High‐Mobility Field‐Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers
University of California, Santa Barbara
Abstract
A record high OFET hole mobility, as high as 23.7 cm2/Vs, is achieved in macroscopic aligned semiconducting polymers. The high mobility is insensitive to the polymer molecular weight. Polymer chains are aligned along the fiber to facilitate intrachain charge transport. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting…
Citation impact
- FWCI
- 55.78
- Percentile
- 100%
- References
- 36
Authors
11Topics & keywords
- Materials science
- Organic field-effect transistor
- Polymer
- Transistor
- Electron mobility
- Field-effect transistor
- Optoelectronics
- Nanotechnology
- Affordable and clean energy