Large-Area Epitaxial Monolayer MoS 2

Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics, and energy harvesting. Large-area growth methods are needed to open the way to applications. Control over lattice orientation during growth remains a challenge. This is needed to minimize or even avoid the formation of grain boundaries, detrimental to electrical, optical, and mechanical properties of MoS2 and other 2D semiconductors. Here, we report on the growth of high-quality monolayer MoS2 with control over lattice orientation. We show that the monolayer film is composed of coalescing single islands with limited numbers of lattice orientation due to an…

• EC
  European Commission

  Awards: 318804, 317451, 2007-2013, 240076
• ÉP
  École Polytechnique Fédérale de Lausanne
• SN
  Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

  Awards: 135046, 147607
• CS
  Centro Svizzero di Calcolo Scientifico
• NS
  National Supercomputing Centre Singapore
• UA
  University at Buffalo
• ER
  European Research Council

  Award: 240076
• SF
  Seventh Framework Programme

  Award: 318804