Two-dimensional semiconductors with possible high room temperature mobility
National Engineering Research Center of Electromagnetic Radiation Control Materials · State Key Laboratory of Electronic Thin Films and Integrated Devices
Abstract
We have calculated the longitudinal acoustic phonon limited electron mobility of 14 two-dimensional semiconductors with composition of MX 2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by the deformation potential approximation. We found that out of 14 compounds, MoTe2, HfSe2 and ZrSe2 are promising regarding to their possible high mobility and finite band gap. The phonon limited mobility can be above 2,500 cm2·V−1·s−1 at room temperature.
Citation impact
- FWCI
- 15.15
- Percentile
- 100%
- References
- 20
Authors
4- WZWenxu ZhangCorresponding
National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices
- ZHZhishuo Huang
National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices
- WZWanli Zhang
National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices
- YLYanrong Li
National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Films and Integrated Devices
Topics & keywords
- Semiconductor
- Phonon
- Electron mobility
- Scattering
- Phonon scattering
- Electron
- Deformation (meteorology)
- Matrix (chemical analysis)