25th Anniversary Article: Key Points for High‐Mobility Organic Field‐Effect Transistors
Chinese Academy of Sciences · Beijing National Laboratory for Molecular Sciences · +3 more institutions
Abstract
Remarkable progress has been made in developing high performance organic field-effect transistors (OFETs) and the mobility of OFETs has been approaching the values of polycrystalline silicon, meeting the requirements of various electronic applications from electronic papers to integrated circuits. In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering. The importance of other factors, such as impurities and testing conditions is also addressed. Finally, the current challenges in this field for practical applications of OFETs are further discussed.
Citation impact
- FWCI
- 49.67
- Percentile
- 100%
- References
- 199
Authors
5- HDHuanli DongCorresponding
Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Capital Normal University
- XFXiaolong Fu
Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, University of Chinese Academy of Sciences
- JLJie Liu
Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, University of Chinese Academy of Sciences
- ZWZongrui Wang
Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, University of Chinese Academy of Sciences
- WHWenping HuCorresponding
Chinese Academy of Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry
Topics & keywords
- Materials science
- Field-effect transistor
- Transistor
- Nanotechnology
- Electron mobility
- Field (mathematics)
- Key (lock)
- Molecular engineering
- Industry, innovation and infrastructure