Total-Ionizing-Dose Effects in Modern CMOS Technologies
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Abstract
This review paper discusses several key issues associated with deep submicron CMOS devices as well as advanced semiconductor materials in ionizing radiation environments. There are, as outlined in the ITRS roadmap, numerous challenges ahead for commercial industry in its effort to track Moore's Law down to the 45 nm node and beyond. While many of the classical threats posed by ionizing radiation exposure have diminished by aggressive semiconductor scaling, the question remains whether there may be unknown, potentially worse threats lurking in the deep submicron regime. This manuscript provides a basic overview of some of the materials, devices, and designs that are being explored or, in some cases, used today.…
Citation impact
683
total citations
- FWCI
- 15.72
- Percentile
- 100%
- References
- 60
Citations per year
Authors
1Topics & keywords
Topics
Keywords
- CMOS
- Radiation hardening
- Ionizing radiation
- Computer science
- Semiconductor device
- Risk analysis (engineering)
- Electrical engineering
- Engineering
UN Sustainable Development Goals
- Industry, innovation and infrastructure
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