articleIEEE Transactions on Nuclear ScienceDec 1, 2006Closed access

Total-Ionizing-Dose Effects in Modern CMOS Technologies

Arizona State University

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Abstract

This review paper discusses several key issues associated with deep submicron CMOS devices as well as advanced semiconductor materials in ionizing radiation environments. There are, as outlined in the ITRS roadmap, numerous challenges ahead for commercial industry in its effort to track Moore's Law down to the 45 nm node and beyond. While many of the classical threats posed by ionizing radiation exposure have diminished by aggressive semiconductor scaling, the question remains whether there may be unknown, potentially worse threats lurking in the deep submicron regime. This manuscript provides a basic overview of some of the materials, devices, and designs that are being explored or, in some cases, used today.…

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683
total citations
FWCI
15.72
Percentile
100%
References
60
Citations per year

Authors

1

Topics & keywords

Keywords
  • CMOS
  • Radiation hardening
  • Ionizing radiation
  • Computer science
  • Semiconductor device
  • Risk analysis (engineering)
  • Electrical engineering
  • Engineering
UN Sustainable Development Goals
  • Industry, innovation and infrastructure
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