Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator
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Abstract
Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 mum are presented. These devices exhibit high modulation efficiency, with a V(pi)L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.
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Keywords
- Optics
- Modulation (music)
- Electro-optic modulator
- Figure of merit
- Diode
- Silicon
- Materials science
- Optoelectronics
UN Sustainable Development Goals
- Affordable and clean energy
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