Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst

In this article, the role of kinetics, in particular, the pressure of the reaction chamber in the chemical vapor deposition (CVD) synthesis of graphene using low carbon solid solubility catalysts (Cu), on both the large area thickness uniformity and the defect density are presented. Although the thermodynamics of the synthesis system remains the same, based on whether the process is performed at atmospheric pressure (AP), low pressure (LP) (0.1-1 Torr) or under ultrahigh vacuum (UHV) conditions, the kinetics of the growth phenomenon are different, leading to a variation in the uniformity of the resulting graphene growth over large areas (wafer scale). The kinetic models for APCVD and LPCVD are discussed,…