High‐Gain Phototransistors Based on a CVD MoS 2 Monolayer
Institute of Atomic and Molecular Sciences, Academia Sinica · Research Center for Applied Science, Academia Sinica
Abstract
A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W(-1) ) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS2 , decreasing the carrier mobility, photoresponsivity, and photogain.
Citation impact
- FWCI
- 33.91
- Percentile
- 100%
- References
- 50
Authors
6- WZWenjing Zhang
Institute of Atomic and Molecular Sciences, Academia Sinica
- JHJing‐Kai Huang
Institute of Atomic and Molecular Sciences, Academia Sinica
- CCChang‐Hsiao Chen
Institute of Atomic and Molecular Sciences, Academia Sinica
- YCYung‐Huang Chang
Institute of Atomic and Molecular Sciences, Academia Sinica
- YCYuh‐Jen Cheng
Research Center for Applied Science, Academia Sinica
Topics & keywords
- Monolayer
- Materials science
- Photoconductivity
- Chemical vapor deposition
- Optoelectronics
- Dopant
- Photodiode
- Electron mobility